Method and apparatus for avoiding particle accumulation in electrodeposition

ABSTRACT

Systems and methods to remove or lessen the size of metal particles that have formed on, and to limit the rate at which metal particles form or grow on, workpiece surface influencing devices used during electrodeposition are presented. According to an exemplary method, the workpiece surface influencing device is occasionally placed in contact with a conditioning substrate coated with an inert material, and the bias applied to the electrodeposition system is reversed. According to another exemplary method, the workpiece surface influencing device is conditioned using mechanical contact members, such as brushes, and conditioning of the workpiece surface influencing device occurs, for example, through physical brushing of the workpiece surface influencing device with the brushes. According to a further exemplary method, the workpiece surface influencing device is rotated in different direction during electrodeposition.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a method and apparatus forremoving particles from surfaces, and avoiding particle accumulation onsurfaces during, electrochemical mechanical processing.

[0003] 2. Description of the Related Art

[0004] Conventional semiconductor devices generally include asemiconductor substrate, usually a silicon substrate, and a plurality ofsequentially formed dielectric interlayers such as silicon dioxide andconductive paths or interconnects made of conductive materials. Theinterconnects are usually formed by filling a conductive material intrenches etched into the dielectric interlayers. In an integratedcircuit, multiple levels of interconnect networks laterally extend withrespect to the substrate surface. The interconnects formed in differentlayers can be electrically connected using vias or contacts. Aconductive material filling process of such features, i.e., viaopenings, trenches, pads or contacts can be carried out by depositing aconductive material over the substrate including such features.

[0005] Copper and copper alloys have recently received considerableattention as interconnect materials because of their superiorelectromigration and low resistivity characteristics. The preferredmethod of copper deposition is electrodeposition. During fabrication,copper is deposited on the substrate that has been previously coatedwith a barrier layer and then a seed layer. The barrier layer coats thevias and the trench as well as the surface of the dielectric layer toensure good adhesion and acts as a barrier material to prevent diffusionof the copper into the semiconductor devices through the dielectricinsulation layer. Typically, seed layer forms a conductive material basefor copper film growth during the subsequent copper deposition. Typicalbarrier materials generally include tungsten, tantalum, titanium, theiralloys, and their nitrides. The deposition process can be carried outusing a variety of processes. After depositing copper into the featureson the semiconductor wafer surface, an etching, an electropolishing(also called electroetching), an electrochemical mechanical etching(ECME) or a chemical mechanical polishing (CMP) step may be employed.These processes remove the conductive materials off the field regions ofthe surface, thereby leaving the conductive materials only within vias,trenches and other features.

[0006] In conventional electrodeposition techniques, copper is coated onthe wafer surface in a conformal manner. As shown in FIGS. 1-3, when,for example, a dual damascene structure on the wafer surface is coatedwith copper using conventional plating, it yields a rather conformalfilm. FIGS. 1-3 show three possible stages in the conventional process.In a first stage shown in FIG. 1, the dual damascene structure 10 with awide trench 11, a small via 12 covered with a barrier layer 13 and acopper seed layer 14 is shown. As the copper film is electroplated in asecond stage shown in FIG. 2, the copper 15 quickly fills the small via12 but coats the wide trench and the surface in a conformal manner. Whenthe deposition process is continued, the wide trench is also filled withcopper in a third stage shown in FIG. 3, but with a resulting large step‘S’ and a thick surface copper layer ‘t’. Thick copper on the surfacepresents a problem during the material removal step such as a CMP step,which is expensive and time consuming. Techniques that can yield thinsurface copper overburden and small or no ‘S’ step are very attractive,which is exemplified in FIG. 4.

[0007] The importance of overcoming the various deficiencies of theconventional electrodeposition techniques is evidenced by technologicaldevelopments directed to the deposition of planar copper layers. Forexample, U.S. Pat. No. 6,176,992, entitled “Method and Apparatus forElectrochemical Mechanical Deposition” and commonly owned by theassignee of the present invention, describes in one aspect an electrochemical mechanical deposition technique (ECMD) that achieves depositionof the conductive material into the cavities on the substrate surfacewhile minimizing deposition on the field regions by polishing the fieldregions with a pad as the conductive material is deposited, thusyielding planar copper deposits. In another aspect, this applicationdescribes an electrochemical mechanical etching (ECME) or electroetchingor electropolishing technique that removes conductive material from thesurface of a workpiece.

[0008] U.S. application Ser. No. 09/740,701 entitled “Plating Method andApparatus that Creates a Differential Between Additive Disposed on a TopSurface and a Cavity Surface of a Workpiece Using an ExternalInfluence,” also assigned to the same assignee as the present invention,describes in one aspect another ECMD method and apparatus for plating aconductive material onto the substrate by creating an externalinfluence, such as causing relative movement between a workpiece and amask, to cause a differential in additives to exist for a period of timebetween a top surface and a cavity surface of a workpiece. While thedifferential is maintained, power is applied between an electrode (inthis case anode) and the substrate to cause greater relative plating ofthe cavity surface than the top surface.

[0009] These ECMD methods can deposit metals in and over cavity sectionson a workpiece in a planar manner. Some methods even have the capabilityto provide deposits with excess metal in and over the cavities. In suchabove-mentioned processes, a pad, a mask or a sweeper, hereinaftercollectively referred to as a workpiece-surface-influencing device(WSID), can be used during at least a portion of the electrodepositionprocess when there may be physical contact between the workpiece surfaceand the WSID. The physical contact, polishing, or the external influenceaffects the growth of the metal by effectively reducing the growth rateon the top surface with respect to the features. During the process stepthat involves the WSID being in close proximity to, and typically incontact with, the metal surface, small particles of the metal may attachonto the WSID material. These particles may exist because of the factthat they may be just physically removed from the substrate surface orthey may originate from the plating solution due to poor filtration ofthe plating solution. In any case once the conductive metal particlesattach themselves to a location on the WSID, they may start growing insize because they become cathodic with respect to the electrode.Further, since they are conductive they receive coating and thus grow insize. ECME methods also use a WSID, and during usage of these methods,the WSID is also in close proximity to, and typically in contact with,the metal surface of the workpiece. During ECME, the potential appliedbetween the workpiece surface and the electrode is reversed renderingthe workpiece surface anodic. Therefore, material is removed from theworkpiece surface. If WSID is not used during this material removalstep, i.e. if there is no mechanical action on the workpiece surface,the process is referred to as just electrochemical etching or polishing.It should be noted that in general both ECMD and ECME processes arereferred to as electrochemical mechanical processing (ECMPR)hereinafter, since both involve electrochemical processes and mechanicalaction.

[0010] In addition to conductive particles, there are alsonon-conductive particles that may accumulate on the WSID material. Thenon-conductive particles may originate from other parts of the system,such as from the plating solution due to the poor filtration or from theWSID material itself due to the wear and tear during processing.

[0011] Presence of such particles on or in close proximity of thesurface of the WSID is undesirable because if they become loose and findtheir way to the interface between the WSID and the workpiece surface,they can cause scratches, inclusions, or other defects on the workpiecesurface or they can actually cause scratches on the surface of the WSID,especially if the WSID has a non-flat surface profile.

[0012] Therefore, elimination of such particles, or process steps tolimit their growth, are very important to increase process yield and thelifetime of the WSID used in planar metal deposition techniques in whichparticles may come close to or touch the workpiece surface, andparticularly when particles are disposed on a WSID that touches theworkpiece surface.

SUMMARY

[0013] It is an object of the invention to remove or reduce the size ofparticles that have formed on pads, masks, sweepers or WSIDs used duringelectrochemical mechanical processing (ECMPR).

[0014] It is another object of the invention to limit the rate at whichconductive particles form or grow on WSID used during ECMPR.

[0015] It is yet another object of the invention to reduce defects onthe workpiece.

[0016] Certain of the above objects of the invention, among others,either singly or in combination, are achieved in one embodiment byoccasionally conditioning the WSID used during ECMPR.

[0017] In one embodiment, this involves placing the WSID in the presenceof a conditioning substrate and applying a bias that will cause removalof, or reduction in the size of, conductive particles on the WSID.

[0018] In another embodiment, the WSID is conditioned using mechanicalcontact members, such as brushes, and conditioning occurs, for example,through physical brushing of the WSID with the brushes.

[0019] In another embodiment, conditioning occurs by rotating the WSIDsused during electrodeposition in different directions, or by rotatingsuccessive substrates or workpieces in different directions.

[0020] The above and other embodiments can also be combined, asdescribed in further detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

[0021] These and other objects, features and advantages of the presentinvention are better understood by reading the following detaileddescription of the preferred embodiment, taken in conjunction with theaccompanying drawings, in which:

[0022] FIGS. 1-4 illustrate various process stages during the plating ofa metal on a semiconductor substrate using electrodeposition techniques;

[0023]FIG. 5 shows various components of an exemplary electrochemicalmechanical processing system;

[0024]FIG. 6 illustrates an exemplary WSID;

[0025]FIG. 7A illustrates the accumulation of particles on an exemplaryWSID that can be operated upon according to the present invention;

[0026]FIG. 7B illustrates the accumulation of particles on anotherexemplary WSID;

[0027]FIG. 7C illustrates the accumulation of particles on yet anotherexemplary WSID;

[0028]FIG. 7D shows a cross-sectional view of the WSID shown in FIG. 7C;

[0029]FIG. 7E shows the accumulation of particles on the surface of anexemplary WSID;

[0030]FIG. 7F shows the accumulation of particles on a fatigued surfaceof an exemplary WSID;

[0031]FIG. 8 illustrates usage of an exemplary conditioning substrateaccording to an embodiment of the present invention;

[0032] FIGS. 9-10 illustrate another exemplary embodiment of the presentinvention;

[0033]FIG. 11A illustrates an exemplary conditioning member according toanother embodiment of the present invention;

[0034]FIG. 11B illustrates another exemplary embodiment of theconditioning member shown in FIG. 11A;

[0035]FIG. 12 illustrates usage of the conditioning member of FIG. 11A;

[0036] FIGS. 13-15 illustrate an exemplary mechanical contact member andthe incorporation of the mechanical contact member into a plating systemhaving a WSID;

[0037] FIGS. 16-18 show an exemplary WSID that can be cleaned orconditioned with the present invention; and

[0038]FIGS. 19 and 20 illustrate a conditioning substrate apparatus thatcan condition a WSID while also performing electrochemical mechanicalprocessing.

DETAILED DESCRIPTION OF THE PRESENTLY PREFERRED EMBODIMENTS

[0039] One way of eliminating the growth of conductive, and typicallymetallic, or other particles on the workpiece surface influencing device(WSID) surface is to use a “particle elimination step” duringelectrochemical mechanical processing, either simultaneous with theelectrochemical mechanical processing or when intermittently stoppingthe electrochemical mechanical processing. This step involves using aconditioning system, with a conditioning member that can assist inremoving particles. As described hereinafter, this conditioning membercan take the form of a conditioning substrate with a plurality ofbrushes that operates mechanically, a conductive conditioning substratewith conductive brushes that operates both mechanically andelectrically, or a conditioning conductor layer that operateselectrically. Of course, modifications of these embodiments can alsoexist. When operating electrically, as described hereinafter, theconductor used to coat is preferably an inert material that cannot beanodized or etched in the plating solution, under a bias, as will bedescribed further hereinafter.

[0040] Reference will now be made to the drawings wherein like numeralsrefer to like parts throughout. FIG. 5 schematically shows an exemplaryelectrochemical mechanical processing (ECMPR) system 100 which can beused for ECMD and ECME processes. The system 100 in our example has anelectrode 102 and the workpiece 104 and a WSID portion 106. When usedfor ECMD, it will include a plating solution, containing the ionicspecies of the metal to be deposited, that touches the electrode 102 andthe work piece 104. An exemplary copper plating solution may be coppersulfate solution that is commonly used in the industry. The workpiece104 may be an exemplary substrate, preferably a silicon wafer portion,to be plated with a conductor metal, preferably copper. The substrate104 comprises a front surface 108 to be plated with copper and a bottomsurface 110 to be held by a carrier head (not shown). The front surface108 may comprise the features shown in FIG. 1.

[0041]FIG. 6 illustrates in more detail an exemplary WSID portion 106,which may comprise a top surface 112 and a bottom surface 114. The WSID106 also comprises an exemplary channel 116 extending between the topand the bottom surfaces 112, 114 and defined by sidewall 118 having afirst wall 118 a and a second wall 118 b. The channel also laterallyextends between a closed end 120 and an open end 122. Although thechannel in this example is V-shaped, it is understood that any shapechannel that allows fluid communication between the wafer and theelectrode can be used.

[0042] During an ECMD process, the front surface 108 of substrate 104 isbrought into close proximity, or contact with, the top surface 112 ofthe WSID 106 for planar metal deposition. As a plating solution,depicted by arrows 124, is delivered to the channel 116, the substrate104 is rotated about a rotation axis 126 while the front surface 108contacts the top surface 112 of the WSID 106 or is in close proximity ofthe top surface 112. For the purpose of clarification, the rotation axis126 may be the point at which the closed end 120 of the channel 116 islocated, thereby ensuring that rotation of the substrate 104 will resultin the entire front surface 108 of the substrate 104 having uniformcontact with the channel 116. As the solution is delivered and fills thechannel 116, it wets the front surface 108 of the substrate 104. Underan applied potential between the substrate and the electrode 102, in thepresence of the solution 124 that fills the channel 116, the conductoror metal, such as copper, is plated on the front surface 108 of thesubstrate and the front surface 108 of the substrate 104 is also sweptby the top surface 112 of the WSID 106. This sweeping of the top surface112 of the WSID 106 assists in obtaining planar deposition of the metal.The solution 124, which is continuously delivered under pressure, willthen flow through the channel 116 in the direction of the arrow 128towards the open end 122 of the channel 116, and exits the WSID 106.

[0043] It is noted that the above description described rotation andmovement of the substrate 104, assuming that the WSID 106 wasstationary. It is understood that the system 100, as described above,will allow for either the substrate or the WSID to move, or for both ofthem to move, thereby creating the same relative effect. For ease ofdescription, however, the invention was described and will continue tobe described in terms of movement of the substrate. Furthermore, theshapes and forms of the channels may be different. When the system 100is used for ECME, although the same plating solution that is used forthe ECMD can still be used, it can be replaced with an electroetchingsolution or an electropolishing solution or an etching solution. In theECME case, the WSID will typically contact the workpiece as describedabove, but the applied potential between the substrate and the electrode102 will be opposite to that which is used for plating, and will be ofthe same polarity as that used when conditioning the WSID with aconditioning substrate that uses an applied potential, as discussedhereinafter.

[0044]FIG. 7A exemplifies how the planar plating process through thechannel 116 progresses as the substrate 104 is rotated about therotation axis 126 on the WSID 106 as described above. It should beunderstood that, for cathodic ECMD, the ionic species in the solution124 are positively charged. Therefore, during deposition the substratesurface 108 upon which deposition is carried out is rendered cathodic(more negative) with respect to the electrode 102, which becomes theanode. It should be noted that the electrode may be an inert electrode(such as Pt, graphite or Pt-coated Ti etc.) or it may be made of thesame metal that is being deposited onto the substrate surface 108(consumable electrode). When a cathodic voltage is applied to thesubstrate surface 108 metal deposits out of the plating solution 126onto the substrate surface 108. However, as mentioned above, as theprocess progresses, particles 130 may form on the sidewalls 118 of thechannel 116. In the process of the present invention, the above ECMDprocess may be repeated coating metal on certain number of substratesurfaces until the metal particle growth on the WSID becomes a problem.The rate at which particle growth occurs depends upon many factors, inparticular how the plating is performed and the applied voltage usedduring plating in particular. Generally, however, after processing10-100 wafers or typically after processing 20-50 wafers, undesiredparticles may start becoming a problem. Similarly, in an ECME process,particles can also attach to the WSID and become a problem. Aspreviously mentioned, presence of such particles on or in closeproximity of the surface of the WSID is undesirable because if theybecome loose and find their way to the WSID/substrate surface interface,they can cause scratches, inclusions, or other defects on the surface orthey can actually cause scratches on the surface of the WSID, especiallyif the WSID has a non-flat profile. For example, when such particlesgrow beyond 0.5 micron size, it is advantageous to remove them or atleast reduce their size using the teachings of the present invention.

[0045] It should be understood that ECMD, ECME, and other processes canoccur in succession, and that any number of such processes can occur,with a conditioning step occurring thereafter, and then any number ofsuch processes can occur again. For example, an ECMD process, followedby an ECME process, followed by an ECMD process is typical. It may thenbe desirable to perform conditioning of the WSID according to thepresent invention, and then resume with some number of processes, forinstance another set of ECMD, ECME, and ECMD processes. Alternately,conditioning may be done after the ECMD process before the EMME process,etc.

[0046] As mentioned above, channels in a WSID may have different shapesand sizes. FIG. 7B exemplifies a WSID 500 having channels 502 that areshaped as slits, preferably substantially parallel slits, and a topsurface 503 or a sweeping surface. Channels 502 may have side walls 504.Channels allow an electrolyte, or another solution to flow between anelectrode (not shown) and a front surface of a wafer 506 (shown indotted lines) which may be rotated and also moved in lateral direction.In this example the top surface 503 of the WSID performs the sweepingaction. As the ECMD or ECME process progresses, particles 508 may getattached on the side walls 504. However, as can be seen in FIG. 7C intop view and in FIG. 7D in cross sectional view, a WSID 500A may have araised surface 510 which is smaller in comparison to the top surface503A of the WSID 500A. In this embodiment the sweeping function isperformed by the raised surface 510. As in the previous case, as theECMPR progresses, particles 508 may get attached on side walls 512 ofthe raised surfaces 510. As will be described more fully below, suchundesired particles are removed using the teachings of the presentinvention.

[0047] In the above examples, channel and raised surface sidewalls aredescribed as the main particle growth or presence sites. However, suchunwanted particle may be on other locations of a WSID for example on thetop surface of a WSID. FIG. 7E shows a WSID portion 600. A top surface602 of the WSID 600 may have various surface features 604 that mayenhance mechanical sweeping of a wafer surface (not shown). Features 604may comprise abrasive particles. As shown in FIG. 7E, particles may getattached or in some cases grow over various locations on the surfacefeatures as well, and the particles should be removed using theteachings of the present invention. As shown in FIG. 7F, during theprocess, portions 608 of the top surface 602 of the WSID may be fatiguedand break loose, forming the particles 606, and damage a wafer surface.

[0048] Therefore, a cleaning process according to the teachings of thepresent invention not only cleans such fatigued portions 608 after theyare broken off the surface but also removes them safely once they areweakly attached to the top surface before they are broken off.

[0049] To that effect, in one embodiment, a conditioning substrate 132,shown in FIG. 8, is coated with a conditioning conductor layer 134 andis substituted in place of the substrate 104. This embodiment of theconditioning substrate 132 may perform the electrochemical cleaning ofthe WSID 106 to remove conductive particles. As will be described belowan alternative embodiment of the conditioning substrate may havemechanical contact members so as to mechanically sweep the WSID 106 (seeFIG. 11A) and remove both conductive and non-conductive particles. Aswill be described below mechanical contact members may mechanicallydislodge the particles from the locations where they are accumulated.The surface 136 of the conditioning conductor layer 134 in FIG. 8 isrendered anodic or more positive compared to the electrode 102 and ananodic current density of, for example 0.1-100 mA/cm2 and typically inthe range of 1-20 mA/cm2 is applied. This anodic current may be passedfor a period of time sufficient to reduce or eliminate such particles.This time period may typically be in the range of 2-10 seconds. Theconditioning conductor is a material that does not get, or at least doesnot substantially get, anodized or etched or otherwise change itscharacter in the plating solution under anodic conditions. It shouldalso not shed any particles. It should, therefore, be preferably made ofa hard coating. Inert nitrides of titanium (Ti), tungsten (W) andtantalum (Ta), or platinum (Pt) or Pt-containing alloys, or iridium (Ir)or Ir-containing alloys are good examples of such conditioningconductors for metal deposition processes that deposit common metals ormetal alloys containing Cu, Ni, Co or the like. It is noted that thisconditioning conductor does not need to have very low resistance likecopper. A sheet resistance of 0.1-10 ohms per square is adequatealthough lower resistances can also be used. In this respect, theconditioning substrate 132 may be a semiconductor wafer coated with theconditioning conductor layer 134. When an anodic voltage is applied tothe conditioning conductor layer 134 on the conditioning substrate 132,the metal particles on or near proximity of the WSID 106 also becomeanodic with respect to the electrode 102. Preferably, during thisprocess, the surface of the conditioning conductor layer makes physicalcontact to the surface of the WSID. As described above, the conditioningconductor layer 134 on the conditioning substrate 132 does not becomesubstantially affected by the anodic voltage, however, the metalparticles 130 become anodized and etched into the plating solution 124.This etching process either causes the particles 130 to completelydissolve into the solution 124 or to become smaller in size, and therebytypically loosen from the sites on which they are located, such as sidewalls 118 to which they attach themselves, so that the flowing platingsolution 124 can wash them out.

[0050] In another embodiment, a conditioning member may be used tomechanically dislodge particles of both natures, conductive ornonconductive. As shown in FIG. 11A, a conditioning member 200 is aplate, preferably disk shaped, having a front surface 202 and a backsurface 204. The front surface 202 may have mechanical contact members206 to mechanically clean the WSID 106. The mechanical contact members206 may be brushes, wipers or the like. In this embodiment, two lines ofbrushes 206 are attached on the front surface 202 in anear-perpendicular array so that they cross each other at the center ofthe front surface 202. As shown in FIG. 11B, in another embodiment, aconditioning member 200A has a front surface 202A and a back surface204A. In this embodiment, the front surface may comprise a plurality ofmechanical contact members 206A that are distributed across the frontsurface 202A of the conditioning member 200A. Other brush variations canalso be used effectively.

[0051] Brushes 206 and the conditioning member 200 may be made of aconductive material or an insulator, depending upon whether conditioningthat requires them to conduct is required, as explained herein. When theWSID needs to be cleaned, the conditioning member is placed on the wafercarrier, workpiece holder, or carrier head, and the conditioning memberis lowered onto the WSID while being rotated or otherwise moved. Asshown in FIG. 12, in operation, the mechanical action between thebrushes 206 and the particles 130 dislodges the particles, whetherconductive or non conductive, from the sites where they are located,such as side walls 118. The plating solution flow is preferably kept onduring this process to wash away any particles that may be dislodged.Although the conditioning member 200 can be used to mechanically cleanthe WSID, it can also be used for electrochemical cleaning as in thefirst embodiment above. In this case the conditioning member and thebrushes 206 must be made of conductive materials or they must be coatedwith conductors that would not be anodized in the plating solution. Anelectrical contact 208 is slidably or otherwise connected to an edgeportion of the back surface 204 so that an anodic potential can beapplied to the conditioning member. Contact may also be made right atthe edge or on the front surface. During the process, application of thepotential allows conductive particles, which contact the conductivebrushes, to be dissolved selectively electrochemically, while themechanical action of the brushes removes both the conductive andnon-conductive particles mechanically.

[0052] In the above embodiments, when a work piece is subsequentlyprocessed using the plating solution 124, particles do not present athreat to the integrity of the film because the surface of the WSID issubstantially free of particles. If copper is being deposited, forexample, without the use of the conditioning process, particles can growto more than 10 microns in size after running more than 20-50 waferswith WSID touching, with the location of these particles beingconcentrated along the edges of the channels. Particle size and thegrowth rate may vary depending on the charge used per substrate and theduration of the process per wafer. In general, a conditioning processmay be carried out after processing some number of wafers, such as 10 to50 wafers, although it is understood that the number of wafers to beprocessed prior to using the conditioning system requires a balancebetween the desired throughput and the concentration of undesiredparticles that can be tolerated.

[0053] In another embodiment of the present invention, elimination ofparticle accumulation and growth, or at least a reduction in theformation and/or growth of such particles, along the channels of theWSID 106 is achieved by controlling the rotation direction of asubstrate or a wafer in the process from run to run. As shown in FIG. 9,in this embodiment, a first substrate 136 or a wafer is first rotated ina first direction 138 during the processing of the first substrate 136.As shown in FIG. 10, during the processing of a second substrate 140 ora wafer, the substrate 140 is rotated in a second direction 142 that isdirectly opposite to the first direction 138. This way, the particles130, conductive or non-conductive, which may start to accumulate alongthe first sidewall 1118 a of the channel 116 will loosen and be pushedinto the channels during the processing cycle of the second substrate140 without giving them chance to grow and deleteriously affect thequality of the coating on the substrates. This method has particularapplication to ECMD, although it can also be used with ECME.

[0054] The embodiments described above can also be used together tofurther reduce the presence of undesired particles.

[0055] As previously mentioned, the WSID may have different channelconfigurations and shapes. As shown in FIGS. 13, 14 and 15, in anotherembodiment, a conditioning device 249 comprising a brush member 250 maybe incorporated into an electrochemical mechanical processing (ECMPR)system 300 having a WSID 400.

[0056] FIGS. 16-18 show an exemplary WSID 400 that can be cleaned orconditioned with the present invention, although any shape WSID, such asthe one shown in FIG. 7B or 7C, may be used as suitable. The WSIDcomprises a channel system 402 comprising recessed channel regions 404and raised sweeping or polishing regions 406. The channel system 402 maypreferably be comprised of more than one channel, such as a firstchannel 408 and a second channel 410, and more than one polishing region406. Each channel 408, 410 is comprised of a closed end 412 and an openend 414. Closed ends 412 form a center of the WSID 400. The open ends414 may also be shaped in other ways without adversely affecting theunique nature of the invention. Preferably, raised polishing regions 406are comprised of a top surface 416 and a side wall 418. The side wall418 elevates the top surface from a surface 420 of the recessed region404. The top surfaces of the raised polishing regions are preferablyformed in a coplanar fashion. The top surfaces 416, which may beabrasive, sweeps the wafer surface during the processing, whether thatis ECMD or ECME. The top surface may be textured such as shown in FIG.7E. A number of holes 422 extend between a bottom surface of the WSID400 and the recessed regions. Holes 422 within the channel regions areformed with a shape so that the inner and outer walls of the holes 422correspond to the arc at a given radius from the center of the WSID, andare progressively smaller in size as they get closer to the center ofthe WSID, and are distributed on opposite sides from the center of theWSID in a staggered manner (hole lines up with space as shown) to ensurethat the entire wafer will receive a uniform application of electrolyte.

[0057] Referring back to FIG. 14, the system 300 comprises a lowerchamber 302, an upper chamber 304 and a carrier head 305 holding thewafer. The lower chamber 302 is comprised of a chamber that includes anelectro chemical mechanical processing (ECMPR) unit 306. The ECMPR unit306 comprises an electrode 308 and a WSID 400. As mentioned before,during processing, an electrolyte solution 312 contacts the electrode308 and flows onto and through the WSID 400. Description of aspects ofone such system can be found in the pending U.S. application Ser. No.09/466,014 entitled “A Vertically Configured Chamber Used For MultipleProcesses” which is commonly owned by the assignee of the presentinvention The conditioning device is also incorporated in the ECMPR unit306. The upper chamber 304 is separated from the lower chamber 302 bymovable guards or flaps 314. In this embodiment, the wafer is loaded inthe upper chamber 304 and lowered into the lower chamber 302 for ECMPR.Once the ECMPR is over, the carrier head retaining the wafer is raisedinto the upper chamber 304 and the flaps 314 are closed. While the waferis rinsed and dried in the upper chamber 304, the WSID is conditioned inthe lower chamber 302 using a brush member 250.

[0058] Also referring to FIG. 14, the brush member 250 may be moved onthe WSID 400 by a brush assembly 324 which enables the brush member 250to move between a first end 326 of the WSID and a second end of the WSID328, in the directions of arrows A and B. The brush assembly is also apart of the conditioning device. The lateral movement of the brushmember on the WSID surface mechanically cleans the surface from theconductive and non-conductive particles. The first position is homeposition of the brush member 250, where the brush member is held whenthe conditioning process is over. Although the brush member 250 can beused to mechanically clean the WSID, it can also be used forelectrochemical cleaning as in one embodiment above. In this case thebrush member 250 must be made of conductive materials or it must becoated with conductors that would not be anodized in the platingsolution. An electrical contact (not shown) may be connected to thebrush member 250 so that an anodic potential can be applied to it.During the process, application of the potential allows conductiveparticles, which contact the conductive brushes, to be dissolvedselectively electrochemically, while the mechanical action of thebrushes removes both the conductive and nonconductive particlesmechanically.

[0059] As shown in FIG. 15, the brush member 250 is mechanicallyconnected by connectors 330 to the belts 331 of the brush assembly 324.A driving motor 332 moves the belts 331 simultaneously along the side ofthe processing unit 306. The motor 332 moves the belts 331, theconnectors 330, and hence the brush member 250 connected to them in thedirection of arrows A and B. Belts 324 are connected to the motor 332through a shaft 334 and wheels 336. As mentioned above, the lowerchamber 302 is separated from the upper chamber 304 by movable flaps314. The upper surface of the flaps 314 comprises cleaning and rinsingfluid nozzles 316. In this embodiment, the cleaning and rinsing isperformed in the upper chamber 304 while the cleaning and rinsingsolution is delivered to the wafer surface through the nozzles 316. Usedsolution leaves the system through a drain opening 320. During theprocess the substrate carrier or carrier head 305 is rotated. Once theECMPR process is over, the wafer is rinsed and dried in the upperchamber 304 while the WSID is conditioned at the lower chamber 302.During the WSID conditioning, the brush assembly is brought into theoperational position and moved across the WSID to sweep the WSIDsurface. As shown in FIG. 15, upon completion of the process, the brushassembly is moved back into its home position. Although a specificdesign is disclosed in FIG. 15, it should be understood that manydifferent mechanisms can be used to move the brush members over the WSIDto practice the conditioning invention disclosed here.

[0060]FIGS. 19 and 20 illustrate a side view of yet another conditioningapparatus 700 that includes a carrier head 702 with brushes 704, and abottom view of the conditioning apparatus 700. As illustrated, thebrushes 704 are disposed around the periphery of the carrier head 702.The brushes 704 provide for conditioning of the WSID 706 throughmechanical movement, in the same manner as has been discussedpreviously. In this embodiment, however, ECMPR of the workpiece 708,whether ECMD or ECME, and conditioning of the WSID 706 can occur at thesame time, during the same process. In this particular situation, inorder to condition the entire WSID 706, the lateral movement the WSID706 should preferably be equal or greater than the radius of the carrierhead 702 so that the WSID portion it covers can effectively be cleaned.

[0061] While the present invention has been described herein withreference to particular embodiments thereof, a latitude of modification,various changes and substitutions are intended in the foregoingdisclosure. It will thus be appreciated that in some instances somefeatures of the invention will be employed without a corresponding useof other features without departing from the spirit and scope of theinvention.

What is claimed is:
 1. A method of processing that includes conditioninga workpiece surface influencing device, the workpiece surfaceinfluencing device being used during at least a portion of at least oneelectrochemical mechanical process that operates upon a workpiece usinga solution, the method comprising: operating upon the workpiece usingthe solution in the electrochemical mechanical process, with theworkpiece surface influencing device being disposed in proximity to theworkpiece for a period of time during the electrochemical mechanicalprocess, the electrochemical mechanical process also resulting inaccumulation of particles onto the workpiece surface influencing device;and conditioning the workpiece surface influencing device beforeperforming another electrochemical mechanical process, the conditioningresulting in one of the number of accumulated particles being reducedand the size of the accumulated particles being reduced.
 2. The methodaccording to claim 1 further including the step of performing theanother electrochemical mechanical process.
 3. The method according toclaim 2 wherein the electrochemical mechanical process is a firstelectrochemical mechanical deposition process and the anotherelectrochemical mechanical process is a second electrochemicalmechanical deposition process.
 4. The method according to claim 3wherein the first electrochemical mechanical deposition process operatesupon the workpiece and the second electrochemical mechanical depositionprocess operates upon another workpiece that is different from theworkpiece.
 5. The method according to claim 3 wherein the firstelectrochemical mechanical deposition process operates upon theworkpiece and the second electrochemical mechanical deposition processoperates upon the workpiece.
 6. The method according to claim 2 whereinthe electrochemical mechanical process is an electrochemical mechanicaldeposition process and the another electrochemical mechanical process isan electrochemical mechanical etching process.
 7. The method accordingto claim 6 wherein the electrochemical mechanical deposition processoperates upon the workpiece and the electrochemical mechanical etchingprocess operates upon the workpiece.
 8. The method according to claim 1wherein the electrochemical mechanical process is an electrochemicalmechanical deposition process and the particles that are reduced in thestep of conditioning are conductive particles formed and accumulatedduring the electrochemical mechanical deposition process andsubstantially made of a conductive material deposited by theelectrochemical mechanical deposition process.
 9. The method accordingto claim 1 wherein the electrochemical mechanical process is anelectrochemical mechanical etching process and the particles that arereduced in the step of conditioning are conductive particles formed andaccumulated during the electrochemical mechanical etching process andsubstantially made of a conductive material removed by theelectrochemical mechanical etching process.
 10. The method according toclaim 1 wherein the particles that are reduced in the step ofconditioning are non-conductive particles.
 11. The method according toclaim 1 wherein the step of conditioning includes: applying a potentialdifference between an electrode and a conditioning member.
 12. Themethod according to claim 11 wherein the electrochemical mechanicalprocess is an electrochemical mechanical deposition process that usesanother potential difference opposite the potential difference, and theparticles that are reduced in the step of conditioning are conductiveparticles accumulated during the electrochemical mechanical depositionprocess and substantially made of a conductive material deposited by theelectrochemical mechanical deposition process.
 13. The method accordingto claim 11 wherein the electrochemical mechanical process is anelectrochemical mechanical etching process that uses another potentialdifference that has the same polarity as the potential difference, andthe particles that are reduced in the step of conditioning areconductive particles accumulated during the electrochemical mechanicaletching process and substantially made of a conductive material removedby the electrochemical mechanical etching process.
 14. The methodaccording to claim 11 wherein the step of conditioning further includes:establishing frictional mechanical contact between the workpiece surfaceinfluencing device and a conditioning member.
 15. The method accordingto claim 14, wherein the step of conditioning rotates the conditioningmember against the workpiece surface influencing device.
 16. The methodaccording to claim 14, wherein the step of conditioning moves theconditioning member in a lateral direction against the workpiece surfaceinfluencing device.
 17. The method according to claim 1 wherein the stepof conditioning further includes: establishing frictional mechanicalcontact between the workpiece surface influencing device and aconditioning member.
 18. The method according to claim 17, wherein thestep of conditioning rotates the conditioning member against theworkpiece surface influencing device.
 19. The method according to claim17, wherein the step of conditioning moves the conditioning member in alateral direction against the workpiece surface influencing device. 20.The method according to claim 2 wherein the electrochemical mechanicalprocess is a plurality of electrochemical mechanical processes and theanother electrochemical mechanical process is another plurality ofelectrochemical mechanical processes.
 21. The method according to claim20 wherein the plurality of electrochemical mechanical processesincludes an electrochemical mechanical deposition process and anelectrochemical mechanical etching process.
 22. The method according toclaim 21 wherein the another plurality of electrochemical mechanicalprocesses includes another electrochemical mechanical deposition processand another electrochemical mechanical etching process.
 23. The methodaccording to claim 20 wherein the plurality of electrochemicalmechanical processes includes a first electrochemical mechanicaldeposition process and an electrochemical mechanical etching process anda second electrochemical mechanical deposition process.
 24. The methodaccording to claim 23 wherein the another plurality of electrochemicalmechanical processes includes another first electrochemical mechanicaldeposition process and another electrochemical mechanical etchingprocess and another second electrochemical mechanical depositionprocess.
 25. The method according to claim 1 wherein during the step ofoperating upon the workpiece using the solution in the electrochemicalmechanical process, the workpiece surface influencing device contactsthe workpiece during the period of time.
 26. The method according toclaim 1 wherein during the step of operating upon the workpiece usingthe solution in the electrochemical mechanical process, the workpiecesurface influencing device does not contact the workpiece during theperiod of time.
 27. The method according to claim 1 wherein during thestep of operating, the solution flows through channels formed in theworkpiece surface influencing device, and during the step ofconditioning, particles formed within the channels are reduced.
 28. Themethod according to claim 1 wherein during the step of operating, thesolution flows through channels formed in the workpiece surfaceinfluencing device, and during the step of conditioning, conductiveparticles associated with the electrochemical mechanical processing thatare formed within the channels are reduced.
 29. The method according toclaim 1 wherein during the step of operating, the solution flows throughchannels formed in the workpiece surface influencing device, and duringthe step of conditioning, conductive particles associated withelectrochemical mechanical deposition that are formed within thechannels are reduced.
 30. The method according to claim 1 furtherincluding the steps of removing the workpiece from being disposed inproximity to the workpiece surface influencing device upon completion ofthe operating step; and bringing a conditioning member in proximity tothe workpiece surface influencing device so that the step ofconditioning can then occur.
 31. The method according to claim 30wherein the steps of removing and bringing both use a holder, and theholder holds the workpiece during the step of operating and the bolderholds the conditioning member during the step of conditioning.
 32. Themethod according to claim 31 wherein the step of conditioning includes:applying a potential difference between an electrode and theconditioning member.
 33. The method according to claim 32 wherein theelectrochemical mechanical process is an electrochemical mechanicaldeposition process that uses another potential difference opposite thepotential difference, and the particles that are reduced in the step ofconditioning are conductive particles accumulated during theelectrochemical mechanical deposition process and substantially made ofa conductive material deposited by the electrochemical mechanicaldeposition process.
 34. The method according to claim 32 wherein theelectrochemical mechanical process is an electrochemical mechanicaletching process that uses another potential difference that has the samepolarity as the potential difference, and the particles that are reducedin the step of conditioning are conductive particles accumulated duringthe electrochemical mechanical etching process and substantially made ofa conductive material removed by the electrochemical mechanical etchingprocess.
 35. The method according to claim 32 wherein the step ofconditioning further includes: establishing frictional mechanicalcontact between the workpiece surface influencing device and theconditioning member.
 36. The method according to claim 35 wherein thestep of establishing frictional mechanical contact established thatcontact using brushes that are part of the conditioning member.
 37. Themethod according to claim 35, wherein the step of conditioning rotatesthe conditioning member against the workpiece surface influencingdevice.
 38. The method according to claim 35, wherein the step ofconditioning moves the conditioning member in a lateral directionagainst the workpiece surface influencing device.
 39. The methodaccording to claim 31 wherein the step of conditioning further includes:establishing frictional mechanical contact between the workpiece surfaceinfluencing device and the conditioning member.
 40. The method accordingto claim 39, wherein the step of conditioning rotates the conditioningmember against the workpiece surface influencing device.
 41. The methodaccording to claim 39, wherein the step of conditioning moves theconditioning member in a lateral direction against the workpiece surfaceinfluencing device.
 42. A processing apparatus that includes removal ofparticles on a workpiece surface influencing device used duringelectrochemical mechanical processing of a workpiece that occurs in thepresence of a solution comprising: an electrochemical mechanicalprocessing system adapted to perform the electrochemical mechanicalprocessing on the workpiece and including: an electrode; a holderadapted to hold the workpiece; a terminal adapted to make electricalcontact with the workpiece; and a workpiece surface influencing device,wherein the electrochemical mechanical processing system is adapted tooperate upon the workpiece using the solution, with the workpiecesurface influencing device being disposed in proximity to the workpiecefor a period of time during the electrochemical mechanical processing,the electrochemical mechanical processing also resulting in accumulationof particles onto the workpiece surface influencing device; and aconditioning system adapted to condition the workpiece surfaceinfluencing device and thereby result in one of the number ofaccumulated particles being reduced and the size of the accumulatedparticles being reduced.
 43. The apparatus according to claim 42 whereinthe conditioning system is attached to the holder and adapted to permitboth the conditioning of the workpiece surface influencing device andthe electrochemical mechanical processing on the workpiece to occursimultaneously.
 44. The apparatus according to claim 42 wherein theconditioning system includes a conditioning substrate with a pluralityof brushes thereon, the plurality of brushes adapted to mechanicallycontact the workpiece surface influencing device.
 45. The apparatusaccording to claim 44 wherein the conditioning substrate attaches to theholder upon removal of the workpiece from the holder.
 46. The apparatusaccording to claim 42 wherein the conditioning system includes aconditioning conductor layer that will not anodize in the solution, andthe conditioning conductor layer is adapted to be electrically connectedto a potential difference that will cause the one of the number ofaccumulated particles to be reduced and the size of the accumulatedparticles to be reduced.
 47. The apparatus according to claim 46 whereinthe conditioning conductor layer attaches to the holder upon removal ofthe workpiece from the holder.
 48. The apparatus according to claim 42wherein the conditioning system and the electrochemical mechanicalprocessing system are located within a lower chamber of a verticallyconfigured chamber system, with the vertically configured chamber systemalso including an upper chamber that includes a cleaning system thatcleans the workpiece and a moveable guard adapted to separate the lowerchamber from upper chamber when the upper chamber is being used.
 49. Theapparatus according to claim 48 wherein the conditioning system includesa plurality of brushes attached to a conditioning substrate and a brushmovement assembly, the brush movement assembly configured to move theplurality of brushes over the workpiece surface influencing device tocondition the workpiece surface influencing device.
 50. The apparatusaccording to claim 49 wherein the conditioning system is adapted tooperate on the workpiece surface influencing device at the same time thecleaning system is adapted to operate upon the workpiece.
 51. Theapparatus according to claim 49 wherein the plurality of brushes and theconditioning substrate have a conductive coating that will not anodizein the solution disposed within the lower chamber, the conditioningsubstrate adapted to be electrically connected to a potential differencethat will cause the one of the number of accumulated particles to bereduced and the size of the accumulated particles to be reduced.
 52. Theapparatus according to claim 51 wherein the conditioning system isadapted to operate on the workpiece surface influencing device at thesame time the cleaning system is adapted to operate upon the workpiece.53. The apparatus according to claim 51 wherein the conductive coatingis comprised of an inert conductor.
 54. The apparatus according to claim48 wherein the conditioning system includes a conditioning conductorlayer that will not anodize in the solution disposed within the lowerchamber, the conditioning conductor layer adapted to be electricallyconnected to a potential difference that will cause the one of thenumber of accumulated particles to be reduced and the size of theaccumulated particles to be reduced.
 55. The apparatus according toclaim 54 wherein the conditioning conductor layer is comprised of aninert conductor.
 59. The apparatus according to claim 48 wherein theconditioning system is adapted to operate on the workpiece surfaceinfluencing device at the same time the cleaning system is adapted tooperate upon the workpiece.
 60. The apparatus according to claim 42wherein: the electrochemical mechanical processing system is locatedwithin a lower chamber of a vertically configured chamber system, withthe vertically configured chamber system also including an upper chamberand a moveable guard adapted to separate the lower chamber from upperchamber when the upper chamber is being used.
 61. The apparatusaccording to claim 61 further including a cleaning system that cleansthe workpiece disposed in the upper chamber.
 62. The apparatus accordingto claim 60 wherein: the holder is further adapted to hold theconditioning system when the holder is no longer holding the workpiece.63. The apparatus according to claim 62 wherein the conditioning systemincludes a plurality of brushes attached to a conditioning substrate,the plurality of brushes configured for relative movement with theworkpiece surface influencing device to condition the workpiece surfaceinfluencing device.
 64. The apparatus according to claim 63 wherein theplurality of brushes and the conditioning substrate have a conductivecoating that will not anodize in the solution disposed within the lowerchamber, the conditioning substrate adapted to be electrically connectedto a potential difference that will cause the one of the number ofaccumulated particles to be reduced and the size of the accumulatedparticles to be reduced.
 65. The apparatus according to claim 64 whereinthe conductive coating is comprised of an inert conductor.
 66. Theapparatus according to claim 62 wherein the conditioning system includesa conditioning conductor layer that will not anodize in the solutiondisposed within the lower chamber, the conditioning conductor layeradapted to be electrically connected to a potential difference that willcause the one of the number of accumulated particles to be reduced andthe size of the accumulated particles to be reduced.
 67. The apparatusaccording to claim 66 wherein the conditioning conductor layer iscomprised of an inert conductor.
 68. A system for processing a workpieceand removing particles on a workpiece surface influencing device, theworkpiece surface influencing device being used in conjunction with aplating solution to process the workpiece, comprising: a holder adaptedto receive the workpiece and to move the workpiece proximate to theworkpiece surface influencing device; an apparatus adapted to deposit,via the plating solution, conductive material onto the workpiece using afirst potential difference that is applied between an electrode and theworkpiece with the workpiece surface influencing device in closeproximity to the workpiece; and a conditioning member having aconditioning conductor layer adapted to assist in removing at least afirst portion of the particles that accumulate on the workpiece surfaceinfluencing device during the depositing of the conductive materialusing a second potential difference that is applied between theelectrode and the conditioning conductor layer of the conditioningmember, the second potential difference being of an opposite polarity tothe first potential difference.
 69. The system according to claim 68,wherein the conditioning member further comprises a mechanical contactmember to mechanically remove at least a second portion of the particlesthat accumulate on the workpiece surface influencing device.
 70. Thesystem according to claim 68 wherein the holder is further adapted tohold the conditioning member when the holder is no longer holding theworkpiece.
 71. A method of processing a workpiece and removing particleson a workpiece surface influencing device, the workpiece surfaceinfluencing device being used in conjunction with a plating solution toprocess the workpiece, comprising: applying a first potential differencebetween an electrode and the workpiece; depositing, via the platingsolution, conductive material onto the workpiece in the presence of thefirst potential difference with a top surface of the workpiece surfaceinfluencing device in close proximity to the workpiece; and moving aconditioning member having at least one mechanical contact memberagainst the top surface of the workpiece surface influencing device sothat at least a portion of the particles that accumulate on theworkpiece surface influencing device during the depositing of theconductive material are mechanically removed from the workpiece surfaceinfluencing device.
 72. The method according to claim 71, wherein the atleast one mechanical contact member comprises a plurality of conductivebrushes and during the step of, further including the step of applying asecond potential difference to the plurality of conductive brushes thatwill assist in removing the particles from the workpiece surfaceinfluencing device.
 73. The method according to claim 72, wherein thestep of moving causes relative rotational motion between the at leastone mechanical contact member and the workpiece surface influencingdevice.
 74. The method according to claim 73, wherein the step of movingcauses relative lateral motion between the at least one mechanicalcontact member and the workpiece surface influencing device.
 75. Themethod according to claim 71, wherein the step of moving causes relativemotion between the at least one mechanical contact member comprising aplurality of brushes and the workpiece surface influencing device. 76.The method according to claim 71, wherein the workpiece surfaceinfluencing device includes a plurality of channels through which theplating solution passes, and during the step of moving the platingsolution continues to pass through the plurality of channels, and,during the step of moving applying a second potential difference betweenthe electrode and the at least one mechanical contact member of theconditioning member, the second potential difference being of anopposite polarity to the first potential difference that will assist inremoving the conductive particles from the workpiece surface influencingdevice.
 77. The method according to claim 71 further including the stepsof removing the workpiece from being disposed in proximity to theworkpiece surface influencing device upon completion of the operatingstep; and bringing a conditioning member in proximity to the workpiecesurface influencing device so that the step of conditioning can thenoccur.
 78. The method according to claim 77 wherein the steps ofremoving and bringing both use a holder, and the holder holds theworkpiece during the step of depositing and the holder holds theconditioning member during the step of moving.
 79. A system forprocessing a workpiece and removing particles on a workpiece surfaceinfluencing device, the workpiece surface influencing device being usedin conjunction with a plating solution to process the workpiece,comprising: an apparatus adapted to deposit, via the plating solutionand with the workpiece surface influencing device in close proximity tothe workpiece, conductive material onto the workpiece in the presence ofa first potential difference that is applied between an electrode andthe workpiece; a holder adapted to receive the workpiece, to move theworkpiece in close proximity to the workpiece surface influencing deviceso that the depositing of the conductive material by the apparatus cantake place, and to remove the workpiece from being in close proximity tothe workpiece surface influencing device upon completion of thedepositing by the apparatus; and a conditioning member, the conditioningmember having at least one mechanical contact member and adapted to moveagainst a top surface of the workpiece surface influencing device sothat at least a portion of the particles that accumulate on theworkpiece surface influencing device during the depositing of theconductive material are mechanically removed from the workpiece surfaceinfluencing device.
 80. The system according to claim 79, wherein theapparatus is further adapted to remove at least a second portion of theparticles that accumulate on the workpiece surface influencing deviceduring the depositing of the conductive material using a secondpotential difference that is applied between the electrode and the atleast one mechanical contact member of the conditioning member, thesecond potential difference being of an opposite polarity to the firstpotential difference, and the at least one mechanical contact layerbeing comprised of an inert conductor so that the at least onemechanical contact layer conductor will not anodize in the platingsolution.
 81. The apparatus according to claim 79 wherein: the holder isfurther adapted to hold the conditioning member when the holder is nolonger holding the workpiece.
 82. A method of processing includingreducing accumulation of particles on a workpiece surface influencingdevice, the workpiece surface influencing device being used inconjunction with a plating solution to operate upon a first and secondworkpiece, comprising: depositing, with the workpiece surfaceinfluencing device in close proximity to the first workpiece, firstconductive material onto the first workpiece using the plating solution,and during depositing causing relative rotational motion in a firstrotational direction between the workpiece surface influencing deviceand the first workpiece; replacing the first workpiece with the secondworkpiece; depositing, with the workpiece surface influencing device inclose proximity to the second workpiece, second conductive material ontothe second workpiece, and during depositing causing relative rotationalmotion in a second rotational direction opposite the first rotationaldirection between the workpiece surface influencing device and thesecond workpiece so that at least a portion of the particles thataccumulate on the workpiece surface influencing device during thedepositing of the first conductive material are removed from theworkpiece surface influencing device.
 83. The method according to claim82 wherein the steps of causing relative rotation rotates one of theworkpiece surface influencing device and the first or second workpiece.84. The method according to claim 82 wherein the steps of causingrelative rotation rotates both the workpiece surface influencing deviceand the first or second workpiece.
 85. A system for processing aworkpiece and removing particles on a workpiece surface influencingdevice, the workpiece surface influencing device being used inconjunction with a plating solution to process the workpiece,comprising: a deposition apparatus positioned in a lower chamber fordepositing conductive material from the plating solution onto theworkpiece with the workpiece surface influencing device in closeproximity to the workpiece; and a conditioning member adapted to bepositioned in the lower chamber and to remove at least a portion of theparticles that accumulate on the workpiece surface influencing deviceduring the depositing of the conductive material by the depositionapparatus; and a holder adapted to position the workpiece in the lowerchamber while the deposition apparatus is being used.
 86. The systemaccording to claim 85, further comprising a cleaning system disposed inthe upper chamber and wherein the upper and lower chamber are capable ofbeing separated using a moveable guard.
 87. The system according toclaim 85 wherein the conditioning member is adapted for relativemovement with the workpiece surface influencing device so that theconductive particles are mechanically removed from the workpiece surfaceinfluencing device.
 88. The system according to claim 85 wherein theconditioning member is adapted to apply a potential difference betweenthe conditioning member and the workpiece surface influencing device toassist in removing the particles from the workpiece surface influencingdevice.
 89. The system according to claim 85, wherein the holder isadapted to rotate about a first axis.
 90. The system according to claim89, wherein the holder is further adapted to move side to side withinthe lower chamber.
 91. The system according to claim 85, wherein thedeposition apparatus comprises an electro chemical mechanical depositionapparatus.
 92. The system according to claim 85, wherein theconditioning member comprises a brush member.
 93. The system accordingto claim 92, further comprising: a brush assembly that moves the brushmember connected thereto in a lateral direction and wherein the brushassembly is disposed in the lower chamber.
 94. The apparatus accordingto claim 93 wherein the conditioning member is adapted to operate on theworkpiece surface influencing device at the same time another system isoperating upon the workpiece in the upper chamber.
 95. The systemaccording to claim 94, wherein the brush assembly comprises: a driveapparatus that moves the brush member in the lateral direction.